Solid state storage device controller with expansion mode

ABSTRACT

Solid state storage device controllers, solid state storage devices, and methods for operation of solid state storage device controllers are disclosed. In one such solid state storage device, the controller can operate in either an expansion DRAM mode or a non-volatile memory mode. In the DRAM expansion mode, one or more of the memory communication channels normally used to communicate with non-volatile memory devices is used to communicate with an expansion DRAM device.

TECHNICAL FIELD OF THE INVENTION

The present invention relates generally to memory devices and in aparticular embodiment the present invention relates to non-volatilememory devices and dynamic random access memory devices.

BACKGROUND OF THE INVENTION

Memory devices can include internal, semiconductor, integrated circuitsin computers or other electronic devices. There are many different typesof memory including random-access memory (RAM), read only memory (ROM),dynamic random access memory (DRAM), static RAM (SRAM), synchronousdynamic RAM (SDRAM), and non-volatile memory.

Non-volatile memory devices (e.g., flash memory) have developed into apopular source of non-volatile memory for a wide range of electronicapplications. Flash memory devices typically use a one-transistor memorycell that allows for high memory densities, high reliability, and lowpower consumption. Common uses for flash memory include personalcomputers, personal digital assistants (PDAs), digital cameras, andcellular telephones. Program code and system data such as a basicinput/output system (BIOS) are typically stored in flash memory devicesfor use in personal computer systems.

Non-volatile memory devices are also incorporated into solid statestorage devices such as solid state drives. Solid state drives can beused in computers to replace the hard disk drives that typically haveused magnetic or optical disks for storing large amounts of data. Asolid state drive does not use moving parts whereas a hard disk driverequires a complex and sensitive drive and read/write head assembly tointeract with the magnetic/optical disk. Thus, the solid state drivesare more resistant to damage and loss of data through vibration andimpacts.

One drawback to current solid state drive technology is achieving thememory density necessary to adequately and cost effectively replace acomputer's hard disk drive. Most modern computers require the capabilityfor storing very large amounts of data (e.g., 250 GB or more) due todigital images, movies, and audio files. Thus, an effective solid statedrive should have a memory density approaching a typical hard drive,remain cost competitive, and still fit within the constantly decreasingthickness of a laptop computer, for example.

FIG. 1 illustrates one typical prior art solid state drive with fourchannels between a controller and the memory devices and no DRAM buffer.A memory communication channel 110 is comprised of the address, data,and control signal lines for a group of memory devices 101-104. In thisexample, each channel is coupled to four stacked memory devices 101-104that is connected to the controller 100.

In order to increase the performance of solid state drives, DRAM hasbeen incorporated into the drives. FIG. 2 illustrates a block diagram ofa typical prior art solid state drive that incorporates a DRAM device200 for storage of temporary data. The drive of FIG. 2 shows an eightchannel controller 230 in which the eight channels 201-208 are eachconnected to four memory devices. The DRAM device 200 is connected tothe controller 230 over dedicated data 220 and address/command 221buses.

Since DRAM has an access time that is substantially less thannon-volatile memory, the DRAM can be used to maintain translation tablesand buffers that would normally be done by the slower non-volatilememory. However, the size of the DRAM is limited by the number ofaddress and data lines available on the controller 230. Memorycontrollers, in order to save space on the controller, typically have asmall quantity of address/data signal lines. Thus only a relatively lowdensity DRAM can be connected to the controller. If the translationtables and other temporary data requiring DRAM requires more memory, thecontroller will use non-volatile memory. This impacts the performance ofthe solid state drive since the non-volatile memory tends to be slowerin both reading and writing of data.

For the reasons stated above, and for other reasons stated below thatwill become apparent to those skilled in the art upon reading andunderstanding the present specification, there is a need in the art fora way to control both non-volatile and volatile memory in a solid statestorage device while using larger volatile memory devices.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 shows a typical prior art solid state drive without a DRAMbuffer.

FIG. 2 shows a typical prior art solid state drive with a DRAM buffer.

FIG. 3 shows a schematic diagram of one embodiment of a portion of anon-volatile memory array in accordance with the non-volatile memorydevice of FIG. 4.

FIG. 4 shows a block diagram of one embodiment of a non-volatile memorydevice that incorporates the memory array of FIG. 3 and uses a memorycommunication channel.

FIG. 5 shows a block diagram of one embodiment of a memory communicationchannel coupled to a plurality of memory devices.

FIG. 6 shows a logical representation of one embodiment of a solid statestorage device controller having a DRAM expansion mode with twonon-volatile memory channels dedicated to DRAM expansion.

FIG. 7 shows DRAM address maps in accordance with the embodiment of FIG.6.

FIG. 8 shows a logical representation of an alternate embodiment of asolid state storage device controller having a DRAM expansion mode witha single non-volatile memory channel dedicated to DRAM expansion.

FIG. 9 shows DRAM address maps in accordance with the embodiment of FIG.8.

FIG. 10 shows a logical representation of one embodiment of a solidstate storage device substantially similar to the embodiment of FIG. 6and operating in a non-volatile memory mode.

FIG. 11 shows a flowchart of one embodiment of a method of operation ofa solid state storage device controller with a DRAM expansion mode.

DETAILED DESCRIPTION

In the following detailed description of the invention, reference ismade to the accompanying drawings that form a part hereof and in whichis shown, by way of illustration, specific embodiments in which theinvention may be practiced. In the drawings, like numerals describesubstantially similar components throughout the several views. Theseembodiments are described in sufficient detail to enable those skilledin the art to practice the invention. Other embodiments may be utilizedand structural, logical, and electrical changes may be made withoutdeparting from the scope of the present invention. The followingdetailed description is, therefore, not to be taken in a limiting sense,and the scope of the present invention is defined only by the appendedclaims and equivalents thereof.

FIG. 3 illustrates a schematic diagram of a portion of a NANDarchitecture memory array comprising series strings of non-volatilememory cells. While the subsequent discussions refer to a NAND memorydevice, the present embodiments are not limited to such an architecture.Alternate embodiments can use other memory architectures with the memorycontroller having the DRAM expansion mode.

The memory array is comprised of an array of non-volatile memory cells301 (e.g., floating gate) arranged in columns such as series strings304, 305. Each of the cells 301 are coupled drain to source in eachseries string 304, 305. An access line (e.g. word line) WL0-WL31 thatspans across multiple series strings 304, 305 is connected to thecontrol gates of each memory cell in a row in order to bias the controlgates of the memory cells in the row. Data lines, such as bit lines BL1,BL2 are eventually connected to sense amplifiers (not shown) that detectthe state of each cell by sensing current on a particular bit line.

Each series string 304, 305 of memory cells is coupled to a source line306 by a source select gate 316, 317 and to an individual bit line BL1,BL2 by a drain select gate 312, 313. The source select gates 316, 317are controlled by a source select gate control line SG(S) 318 coupled totheir control gates. The drain select gates 312, 313 are controlled by adrain select gate control line SG(D) 314.

Each memory cell can be programmed as a single level cell (SLC) ormultilevel cell (MLC). Each cell's threshold voltage (V_(t)) isindicative of the data that is stored in the cell. For example, in anSLC, a V_(t) of 0.5V might indicate a programmed cell while a V_(t) of−0.5V might indicate an erased cell. The MLC may have multiple V_(t)windows that each indicate a different state. Multilevel cells can takeadvantage of the analog nature of a traditional flash cell by assigninga bit pattern to a specific voltage range stored on the cell. Thistechnology permits the storage of two or more bits per cell, dependingon the quantity of voltage ranges assigned to the cell.

FIG. 4 illustrates a functional block diagram of a non-volatile memorydevice 400 that can be incorporated on an integrated circuit die. Thenon-volatile memory device 400, in one embodiment, is flash memory. Thenon-volatile memory device 400 has been simplified to focus on featuresof the memory that are helpful in understanding the present programmingembodiments.

The non-volatile memory device 400 includes an array 430 of non-volatilememory cells such as the floating gate memory cells that are illustratedin FIG. 3 and discussed previously. The memory array 430 is arranged inbanks of word line rows and bit line columns. In one embodiment, thecolumns of the memory array 430 are comprised of series strings ofmemory cells. As is well known in the art, the connections of the cellsto the bit lines determines whether the array is a NAND architecture, anAND architecture, or a NOR architecture.

The memory array 430 can be organized into memory blocks. The quantityof memory blocks is typically determined by the size of the memorydevice (i.e., 512 MB, 1 GB). In one embodiment, each memory block isorganized into 64 pages.

Address buffer circuitry 440 is provided to latch address signalsprovided through the I/O circuitry 460. Address signals are received anddecoded by a row decoder 444 and a column decoder 446 to access thememory array 430. It will be appreciated by those skilled in the art,with the benefit of the present description, that the number of addressinput connections depends on the density and architecture of the memoryarray 430. That is, the number of addresses increases with bothincreased memory cell counts and increased bank and block counts. Datais also input and output through the I/O circuitry 460 based on thetiming of the control signals 472.

The non-volatile memory device 400 reads data in the memory array 430 bysensing voltage or current changes in the memory array columns usingsense amplifier circuitry 450. The sense amplifier circuitry 450, in oneembodiment, is coupled to read and latch a row of data from the memoryarray 430. Data input and output buffer circuitry 460 is included forbidirectional data communication as well as address communication over aplurality of data connections 462 with an external controller. Writecircuitry 455 is provided to write data to the memory array.

The memory control circuitry 470 decodes signals provided on control bus472 from an external controller. These signals can include read/write(R/ W), chip enable (CE), command latch enable (CLE), address latchenable (ALE) as well as other control signals that are used to controlthe operations on the memory array 430 as well as other circuitry of thememory device 400. In one embodiment, these signals are active low butalternate embodiments can use active high signals. The memory controlcircuitry 470 may be a state machine, a sequencer, or some other type ofcontroller to generate the memory control signals.

The non-volatile memory device 400 communicates with an externalcontroller over a channel 490. In one embodiment, the channel 490 iscomprised of the memory address, data, and control signals between theexternal controller and the memory device 400. The embodiment of FIG. 4shows the address and data being coupled as one bus to the I/O circuitry460. In an alternate embodiment, the address and data buses are separateinputs/outputs with the memory device 400.

FIG. 5 illustrates a block diagram of one embodiment of a plurality ofmemory devices 501-508 that can make up one or more communicationchannels in a solid state storage device. This figure shows theaddress/data bus 510, Read/ Write control signal 511, and chip enablesignals 512 that make up the one or more communication channels. Theillustrated embodiment includes eight separate memory devices so thateight chip enable signals ( CE0 - CE7 ) are used. Each memory device501-508 is formed on a separate die and stacked with one or more of theother memory devices to form the solid state storage device.

The embodiment of FIG. 5 is for purposes of illustration only. A solidstate storage device may use only one memory device 501 or multiplememory devices. For example, a solid state storage device could becomprised of a plurality of non-volatile memory devices organized intogroups of non-volatile memory devices 501, 502 in which each group ofnon-volatile memory devices share a common communication channelincluding a single chip enable line. Each of the plurality ofnon-volatile memory communication channels is coupled to a differentgroup of non-volatile memory devices.

FIG. 6 illustrates a block diagram of one embodiment of a solid statestorage device controller operating in a DRAM expansion mode with twonon-volatile memory channels dedicated to DRAM expansion. The subsequentdiscussion refers to a DRAM. However, one skilled in the art wouldrealize that any memory device other than NAND flash could besubstituted for the DRAM and still remain within the scope of thedisclosed embodiments. Such a memory device should be capable of fast,random access and may be of a volatile or a non-volatile type. A slowermemory device typically has a slower access time than the faster memorydevice.

In this embodiment, two of the controller's memory communicationchannels 640, 641, normally used for communication with the non-volatilememories, are instead used to communicate with an expansion DRAM bank601 that is separate and independent from the primary DRAM bank 602.This provides improved bandwidth as well as additional performance dueto the locality of many of the DRAM operations now having twice as manyDRAM pages.

Referring to FIG. 6, the solid state storage device memory controller600 is comprised of a memory control circuit, such as primary DRAMsequencer 621 that couples the primary DRAM device 602 to the controller600. The DRAM device 602 communicates with the primary DRAM sequencer621 over data and address/control buses 645.

The primary DRAM sequencer 621 is a DRAM control circuit that isresponsible for generating the timing and commands necessary foroperation of the memory device 602. For example, the primary DRAMsequencer 621 can generate the read/write control signals as well as therefresh signals necessary for proper DRAM operation.

A secondary DRAM sequencer 620 is used for essentially the samefunctions as the primary DRAM sequencer 621. However, the secondary DRAMsequencer 620 is responsible for generating the control signalsnecessary for proper operation of the expansion DRAM device 601.

Two of the non-volatile memory sequencers 630, 631 are shown coupled toa multiplexer 612. The non-volatile memory sequencers 630, 631 arenon-volatile memory control circuits that generate the timing andcommands necessary for operation of the non-volatile memory devices. Thenon-volatile memory sequencers 603 control an access process to writeand/or read the memory devices on each memory communication channel 650.For example, the non-volatile memory sequencers 630, 631 can generatethe control signals that control the select gate drain and select gatesource transistors as described with reference to FIG. 3. Thenon-volatile memory sequencers 630, 631 may also be responsible forgenerating many other memory control signals.

Two non-volatile memory sequencers 630, 631 are shown in FIG. 6.Alternate embodiments may use other quantities of non-volatile memorysequencers. For example, one embodiment might use only one sequencer.Another embodiment could use a different non-volatile memory sequencerfor each different memory communication channel 650.

The multiplexer 612, in response to a select signal, is responsible forselecting which of the circuits attached to its inputs are output to thevarious memory communication channels 640, 641, 650 of the solid statestorage device controller 600. The select signal is generated by a CPU610 that stores a select signal (e.g., bit or bits) in a register 611.The CPU 610 generates the select signal in response to data input overthe host interface. For example, if an access is made by an externalsystem to one of the memory communication channels 650 with thenon-volatile memory, the CPU generates and stores a select signal thatselects the appropriate channel 650 through the multiplexer 612. If theCPU is executing an algorithm that requires updating translation tablesthat are stored in the expansion DRAM device 601, the CPU 610 generatesand stores a select signal that causes the multiplexer 612 to select thesecondary DRAM sequencer 620 to be output so that the expansion DRAMdevice 601 can be accessed.

The controller 600 is additionally configured with a host interface 651over which the controller 600 communicates with external devices/systemssuch as computers and cameras. The host interface 651 can be parallelATA, SATA, SAS, PCIe, Fiber Channel, SCSI, Gigabit Ethernet, or someother communication standard.

The expansion DRAM device 601 is coupled to the controller 600 over twoof the communication channels 640, 641 that are normally used forcommunication with the non-volatile memory devices. The two channels640, 641 are coupled to the address/command bus 640 and the data bus 641of the DRAM device 601.

If the expansion DRAM device 601 is present, it is used to storeadditional translation tables and for additional data buffering. Typicaluses for the primary DRAM and the expansion DRAM include: transfer fromnon-volatile memory to DRAM during a solid state storage device readoperation, transfer from DRAM to non-volatile memory on a solid statestorage device write operation, error correction operations on readdata, translation table read (allowing a logical drive address to map toany physical non-volatile memory address), data collection readoperation from non-volatile memory, data collection write operation tonon-volatile memory, static wear-leveling, translation table update dueto data collection operations or static wear-leveling, and translationtable write operations to non-volatile memory. These are only anillustration of the possible functions that use the primary andexpansion DRAMs.

The above-described elements of the solid state storage device memorycontroller of FIG. 6 are a logical representation of the functionsperformed by the controller. These elements are not necessarily requiredfor proper operation of the controller. Alternate embodiments may useother elements to perform substantially the same functions.Additionally, for purposes of clarity, not all elements of the memorycontroller are shown. Only those elements related to proper operation ofthe disclosed embodiments are shown and discussed.

FIG. 7 illustrates two memory address maps for use with the embodimentof FIG. 6. This memory map shows how the DRAM addresses are splitbetween the two DRAM devices 601, 602 of FIG. 6. These addresses aregenerated by the primary sequencer 621 and secondary sequencer 620 incombination with the CPU 610 of the controller 600.

FIG. 7 shows that if the controller 600 is not in the DRAM expansionmode, only the single primary DRAM device 602 is used. Thus the memorymap for the primary DRAM device 602 is in the range of 00000000H to70000000H (32 address bits). In the DRAM expansion mode, the addresses00000000H to 7FFFFFFFH are used to address the primary DRAM 602 while80000000H to FFFFFFFFH are used to address the expansion DRAM device601.

The address maps of FIG. 7 are for purposes of illustration only. Ifdifferent size primary and/or expansion DRAM devices are used, theaddress map will be comprised of different addresses. Also, theaddresses for each DRAM can start in different locations than 00000000Hor 80000000H.

FIG. 8 illustrates an alternate embodiment of a solid state storagedevice controller 800 having a DRAM expansion mode with a singlenon-volatile memory channel 811 dedicated to DRAM expansion. The widthof the communication channel 811 for the expansion DRAM is sufficient toexpand the data bus to a width of 32 bits.

The solid state storage device controller 800 of FIG. 8 is comprised ofa DRAM sequencer 803 that is responsible for generating the controlsignals for both the primary DRAM device 801 and the expansion DRAMdevice 802. As discussed previously, the sequencer 803 generates thenecessary read, write, and refresh control signals for proper operationof a DRAM device.

A non-volatile memory sequencer 804 generates the non-volatile memorycontrol signals to write and/or read the memory devices on each memorycommunications channel 810 that is coupled to at least one non-volatilememory device. For example, the non-volatile memory sequencer 804 cangenerate the control signals that control the select gate drain andselect gate source transistors as described with reference to FIG. 3.The non-volatile memory sequencer 804 may also be responsible forgenerating many other non-volatile memory control signals.

Both the DRAM sequencer 803 and the non-volatile memory sequencer 804are input to a multiplexer 805 that selects between the two sequencers803, 804 in response to the select signal. As in the previous embodimentof FIG. 6, the CPU 807 generates the select signal that is then storedin the register 806. If an input data signal is to be stored in one ofthe non-volatile memories coupled to one of the non-volatile memorycommunication channels 810, the CPU 807 generates a select signal thatselects the non-volatile memory sequencer 804 to be output by themultiplexer 805. If the CPU 807 requires the use of the expansion DRAM,the CPU 807 generates the select signal that selects the memorycommunication channel (e.g., Channel 10) 811 that is coupled to theexpansion DRAM data bus.

In the embodiment of FIG. 8, both DRAM devices 801, 802 are exposed tothe same addresses and commands. Each DRAM would have a write mask thatenabled it to differentiate between addresses and commands meant for theother device 801, 802. This embodiment could also use data steeringlogic (not shown) to take advantage of the wider data bus. The leastsignificant address bit would then be used to select the upper or lower16-bit portions of the DRAM data bus. The remaining address bits cominginto the DRAM sequencer would be shifted down one.

The above-described elements of the solid state storage device memorycontroller of FIG. 8 are a logical representation of the functionsperformed by the controller. These elements are not necessarily requiredfor proper operation of the controller. Alternate embodiments may useother elements to perform substantially the same functions.Additionally, for purposes of clarity, not all elements of the memorycontroller are shown. Only those elements related to proper operation ofthe disclosed embodiments are shown and discussed.

FIG. 9 illustrates DRAM address maps in accordance with the embodimentof FIG. 8. When only the primary DRAM device 801 of FIG. 8 is used, thecontroller 800 is in the 16-bit mode so that addresses 0000H to FFFFHare used. If the controller is in the DRAM expansion mode, the addressesin the primary DRAM device use even addresses 00000000H to FFFFFFFEHwhile the expansion DRAM device uses odd addresses 00000001H toFFFFFFFFH.

The address maps of FIG. 9 are for purposes of illustration only. Ifdifferent size primary and/or expansion DRAM devices are used, theaddress maps will be comprised of different addresses. Also, theaddresses for each DRAM can start in different locations than 00000000H.

FIG. 10 illustrates a logical block diagram of the embodiment of FIG. 6but operating in the non-expansion mode (e.g., the non-volatile memorymode) instead of the expansion mode as illustrated in FIG. 6. Eachelement of the embodiment of FIG. 10 with the same reference number asthe element of FIG. 6 provides the same function as that described abovewith reference to FIG. 6.

In this embodiment, with the non-volatile memory mode selected, thecommunication channels 650 are dedicated only to the non-volatile memorydevices of each channel. The secondary DRAM sequencer 620 is stillpresent but is not being used without the extra expansion DRAMinstalled.

The selection of the different modes (e.g., DRAM expansion mode;non-volatile memory mode) for the above-described embodiments can beperformed by a hardwired mode selection input 1000 for the solid statestorage device controller as illustrated in FIG. 10. The mode selectionmay be done during manufacture of the solid state storage device with ajumper to ground for one mode and a jumper to VCC for the other mode.This allows the manufacturer to make and inventory only one controllerthat is capable of operating in both modes. Thus, if the DRAM expansionmode is necessary for one embodiment, the expansion DRAM device isinstalled and the DRAM expansion mode selected by the hardwired input.In an alternate embodiment, the mode can be selected by a command fromthe CPU in the controller. The CPU may detect the presence of a DRAM andconfigure the ports appropriately.

FIG. 11 illustrates a flowchart of one embodiment of a method ofoperation of a solid state storage device controller with a DRAMexpansion mode. The expansion mode is enabled 1101 either through thehardwired input or the command from a CPU in the controller. Thecontroller then communicates with the expansion DRAM over one or more ofthe memory communication channels 1103 as described in the embodimentsabove.

conclusion

In summary, one or more embodiments provide a solid state storage devicecontroller with the capability to operate in both an expansion mode anda non-expansion memory mode. The expansion mode uses one or more memorycommunication channels, normally used for non-volatile memorycommunication, to communicate with an expansion DRAM device. The solidstate storage device could be a solid state drive (SSD) used incomputers to replace the magnetic hard drive.

Although specific embodiments have been illustrated and describedherein, it will be appreciated by those of ordinary skill in the artthat any arrangement that is calculated to achieve the same purpose maybe substituted for the specific embodiments shown. Many adaptations ofthe invention will be apparent to those of ordinary skill in the art.Accordingly, this application is intended to cover any adaptations orvariations of the invention. It is manifestly intended that thisinvention be limited only by the following claims and equivalentsthereof.

1. A solid state storage device controller comprising: a memory controlcircuit for controlling at least a primary, faster memory device in anon-expansion memory mode and the primary memory device and an expansionmemory device in an expansion mode; and a plurality of memorycommunication channels for coupling at least one slower memory device tothe solid state storage device controller wherein, in the expansionmode, at least one of the plurality of memory communication channels isconfigured to couple the expansion memory device to the volatile memorycontrol circuit, wherein a time to access the faster memory device isless than a time to access the slower memory device.
 2. The solid statestorage device controller of claim 1 and further including a hostinterface for communicating with an external device.
 3. The solid statestorage device controller of claim 1 wherein the memory control circuitis a sequencer that controls the timing and control signals to theprimary memory in the non-expansion memory mode and controls the timingand control signals to both the primary and the expansion memory devicesin the expansion mode.
 4. The solid state storage device controller ofclaim 1 wherein the memory control circuit is a plurality of sequencersthat control the timing and control signals to the primary memory in thenon-expansion memory mode and controls the timing and control signals toboth the primary and the expansion memory devices in the expansion mode.5. The solid state storage device controller of claim 1 wherein at leastsome of the communication channels are coupled to a group ofnon-volatile memory devices that are each a different subset of theplurality of slower memory devices.
 6. The solid state storage devicecontroller of claim 1 and further including a CPU for controllingoperation of the solid state storage device controller.
 7. The solidstate storage device controller of claim 1 wherein, in the non-expansionmemory mode, the plurality of memory communication channels areconfigured to be coupled only to the at least one slower memory device.8. The solid state storage device controller of claim 1 wherein eachmemory communication channel is comprised of address, data, and controlsignals.
 9. The solid state storage device controller of claim 1 whereineach of the at least one slower memory devices are NAND architectureflash memory devices.
 10. A solid state storage device controllercomprising: a primary DRAM sequencer for generating DRAM signals for aprimary DRAM; a secondary DRAM sequencer for generating DRAM signals foran expansion DRAM; at least one non-volatile memory sequencer forgenerating non-volatile memory signals for a plurality of non-volatilememory devices; and a plurality of non-volatile memory communicationchannels that couple the at least one non-volatile memory sequencer tothe plurality of non-volatile memory devices, each communication channelconfigured to couple a different group of non-volatile memory devices ofthe plurality of non-volatile memory devices wherein, in response to anexpansion mode, at least one of the plurality of non-volatilecommunication channels couples only the expansion DRAM to the secondaryDRAM sequencer; and an interface for coupling the solid state storagedevice to an external system.
 11. The solid state storage devicecontroller of claim 10 wherein the solid state storage device is a solidstate drive.
 12. The solid state storage device controller of claim 10wherein the DRAM signals include address signals, data signals, andcontrol signals.
 13. The solid state storage device controller of claim10 wherein the interface is one of parallel ATA, SATA, SAS, PCIe, FiberChannel, SCSI, Gigabit Ethernet.
 14. The solid state storage devicecontroller of claim 10 wherein, in response to the expansion mode, theexpansion DRAM is coupled to the secondary DRAM sequencer over two ofthe plurality of non-volatile memory communication channels.
 15. Thesolid state storage device controller of claim 14 wherein a DRAMaddress/control bus is coupled over a first of the two non-volatilememory communication channels and a DRAM data bus is coupled over asecond of the two non-volatile memory communication channels.
 16. Asolid state storage device comprising: a plurality of non-volatilememory devices organized into separate groups of non-volatile memorydevices; a plurality of non-volatile memory communication channelswherein each separate group of non-volatile memory devices is coupled toa different non-volatile memory communication channel; a primaryvolatile memory device; an expansion volatile memory device; and a solidstate storage device controller coupled to the plurality of non-volatilememory devices over the plurality of non-volatile memory communicationchannels and coupled to the primary volatile memory device through aprimary volatile memory control circuit and wherein the controller iscoupled to the expansion volatile memory device through at least one ofthe plurality of non-volatile memory communication channels when thecontroller is in an expansion mode.
 17. The solid state storage deviceof claim 16 wherein the at least one non-volatile memory communicationchannel is coupled to a data bus of the expansion volatile memorydevice.
 18. The solid state storage device of claim 17 wherein theexpansion volatile memory device shares an address and control bus withthe primary volatile memory device.
 19. The solid state storage deviceof claim 16 wherein the expansion volatile memory device is coupled tothe controller over two of the plurality of non-volatile memorycommunication channels when the controller is in the expansion mode. 20.The solid state storage device of claim 16 wherein the controllerfurther comprises a volatile memory sequencer that is coupled to boththe primary volatile memory device and the expansion volatile memorydevice when the controller is in the expansion mode.
 21. The solid statestorage device of claim 20 wherein the volatile memory sequencer iscoupled only to the primary volatile memory device and the plurality ofnon-volatile memory communication channels are coupled only between thegroups of non-volatile memory devices and the controller when thecontroller is not in the expansion mode.
 22. A method for operation of asolid state storage device controller, the method comprising: enablingan expansion mode in the solid state storage device controller; andcommunicating with an expansion volatile memory device over anon-volatile memory communication channel.
 23. The method of claim 22wherein the expansion mode is enabled by one of a hardwired input or asoftware command.
 24. The method of claim 22 wherein communicating withthe expansion volatile memory device comprises writing translationtables to the volatile memory device.